Title :
Smart co-integration of light sensitive layers with FDSOI transistors for More than Moore applications
Author :
Grenouillet, L. ; De Salvo, B. ; Brunet, L. ; Coignus, J. ; Tabone, C. ; Mazurier, J. ; Le Royer, C. ; Grosse, P. ; Jaud, M.A. ; Rivallin, P. ; Chalupa, Z. ; Rozeau, O. ; Faynot, O. ; Vinet, M.
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
We demonstrate for the first time that FDSOI technology can be turned into an integrated light-sensitive device technology capable of detecting or interacting with light. By designing a dedicated diode below the BOX, light absorption induced VT shifts as large as 100mV and saturation drain current modulation of 70% are measured for the transistors above the BOX. Those experimental results are supported by TCAD simulations and pave the way to More than Moore applications for FDSOI technology.
Keywords :
integrated optoelectronics; silicon-on-insulator; BOX; FDSOI transistor; More than Moore application; TCAD simulation; buried oxide; fully depleted silicon-on-insulator technology; integrated light-sensitive device technology; light absorption; light sensitive layer; saturation drain current modulation; smart cointegration; voltage shift; Absorption; Lighting; Logic gates; Modulation; Silicon; Substrates; Transistors;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location :
Millbrae, CA
DOI :
10.1109/S3S.2014.7028245
