Title :
Monte Carlo simulation of non-equilibrium transport in ultra-thin base Si bipolar transistors
Author :
Lee, W. ; Laux, S.E. ; Fischetti, M.V. ; Tang, D.D.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Ultrathin base (>
Keywords :
Monte Carlo methods; bipolar transistors; semiconductor device models; transport processes; Fermi-Dirac statistics; Monte Carlo simulation; Si; base transit time; base-collector junction; bipolar simulations; collector transit time; device performance; electron transport model; hole transport models; long-range Coulomb correlation effects; n-p-n bipolar transistors; neutral base region; neutral base thickness; nonequilibrium carrier transport effects; nonequilibrium transport; p-n-p bipolar transistors; quasi-ballistic transport; scaled bipolar devices; self-consistent Monte Carlo program; thin base devices; ultra-thin base bipolar transistors; velocity overshoot; Bipolar transistors; Charge carrier processes; Current density; Doping profiles; Electric variables; Impurities; Ion implantation; Monte Carlo methods; Photonic band gap; Plasma simulation;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74324
