Modelling of breakdown voltage and its temperature dependence in SAGCM InP/InGaAs avalanche photodiodes

Author

Ma, C.L.F. ; Deen, M.J. ; Tarof, L.E. ; Yu, J.

Author_Institution

Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

583

Lastpage

586

Abstract

We investigate breakdown voltage and its temperature dependence from -40/spl deg/C to 110/spl deg/C in SAGCM InP/InGaAs avalanche photodiodes. The experimental data shows that the breakdown voltage is approximately a linear function of temperature, with a temperature coefficient /spl eta/ between 0.14 to 0.18 Vspl deg/C, and this /spl eta/ is in agreement with our physical model. The successful application of the physical model implies that the empirical formula used here for temperature dependence of the impact ionization coefficients in InP is verified.<>

Keywords

III-V semiconductors; avalanche photodiodes; electric breakdown; gallium arsenide; impact ionisation; indium compounds; semiconductor device models; -40 to 110 degC; InP-InGaAs; InP/InGaAs; SAGCM; avalanche photodiodes; breakdown voltage; impact ionization; physical model; separate absorption grading charge and multiplication; temperature coefficient; temperature dependence; Absorption; Avalanche photodiodes; Breakdown voltage; Current measurement; Impact ionization; Indium gallium arsenide; Indium phosphide; Size measurement; Temperature dependence; Voltage fluctuations;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383341

Filename

383341