Title :
Modelling of breakdown voltage and its temperature dependence in SAGCM InP/InGaAs avalanche photodiodes
Author :
Ma, C.L.F. ; Deen, M.J. ; Tarof, L.E. ; Yu, J.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
Abstract :
We investigate breakdown voltage and its temperature dependence from -40/spl deg/C to 110/spl deg/C in SAGCM InP/InGaAs avalanche photodiodes. The experimental data shows that the breakdown voltage is approximately a linear function of temperature, with a temperature coefficient /spl eta/ between 0.14 to 0.18 Vspl deg/C, and this /spl eta/ is in agreement with our physical model. The successful application of the physical model implies that the empirical formula used here for temperature dependence of the impact ionization coefficients in InP is verified.<>
Keywords :
III-V semiconductors; avalanche photodiodes; electric breakdown; gallium arsenide; impact ionisation; indium compounds; semiconductor device models; -40 to 110 degC; InP-InGaAs; InP/InGaAs; SAGCM; avalanche photodiodes; breakdown voltage; impact ionization; physical model; separate absorption grading charge and multiplication; temperature coefficient; temperature dependence; Absorption; Avalanche photodiodes; Breakdown voltage; Current measurement; Impact ionization; Indium gallium arsenide; Indium phosphide; Size measurement; Temperature dependence; Voltage fluctuations;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383341
