DocumentCode
2526255
Title
Direct measurement of transit time effects in MODFETs
Author
Sheridan, J.A. ; Nechay, B.A. ; Bloom, D.M. ; Solomon, P.M. ; Pao, Y.C.
Author_Institution
Edward L. Ginzton Lab., Stanford Univ., CA, USA
fYear
1994
fDate
11-14 Dec. 1994
Firstpage
579
Lastpage
582
Abstract
We report measurement of electron transit time effects in short-channel modulation-doped field-effect transistors (MODFETs) with single-picosecond temporal resolution. We believe these are the first time-resolved experimental observations of transient carrier transport in electronic devices on this time scale.<>
Keywords
high electron mobility transistors; semiconductor device testing; transit time devices; MODFETs; electron transit time effects; short-channel modulation-doped field-effect transistors; single-picosecond temporal resolution; time scale; time-resolved experimental observations; transient carrier transport; Coplanar waveguides; Electrons; FETs; HEMTs; MODFET circuits; Photoconductivity; Switches; Time measurement; Velocity measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-2111-1
Type
conf
DOI
10.1109/IEDM.1994.383342
Filename
383342
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