Title :
Physical and electrical modeling of bonding wires up to 110 GHz
Author :
Descharles, C. ; Algani, C. ; Mercier, B. ; Alquie, Georges
Author_Institution :
Lab. des Instruments et Systemes d´´Ile-de-France, Univ. Pierre et Marie Curie, Paris, France
Abstract :
This paper presents an electrical model of bonding wire effects. This model fits in Ka to W bands and it can be easily used in an electrical simulator. It takes into account the different coupling effects which appear in such structures and uses analytical formulas to calculate the components of the equivalent circuit. This bonding wire electrical model has been validated by comparing it to 3D electromagnetic simulations and measures. Bonding wire structures have realized with a MEMs technique developed on a silicon substrate and they have been characterized up to 110 GHz. The model and the results of simulations and measures are presented and prove that the bonding wire technique can be used in the millimeter wave band.
Keywords :
circuit simulation; equivalent circuits; integrated circuit bonding; micromechanical devices; modelling; 3D electromagnetic simulations; Ka bands; MEMs; W bands; analytical formulas; bonding wire effects; bonding wire electrical model; bonding wire structures; coupling effects; electrical modeling; electrical simulator; equivalent circuit; millimeter wave band; physical modeling; silicon substrate; Bonding; Circuit simulation; Coupling circuits; Electric variables measurement; Electromagnetic measurements; Electromagnetic modeling; Equivalent circuits; Millimeter wave measurements; Silicon; Wires;
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMC.2003.1262971
