Title :
Influence of the dislocation density on the performance of heteroepitaxial indium phosphide solar cells
Author :
Jain, R.K. ; Flood, D.J.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
Calculations are made to study the dependence of heteroepitaxial InP solar cell efficiency on dislocation density. Effects of surface recombination velocity and cell emitter thickness have been considered. Calculated results are compared with the available experimental results on representative InP solar cells. It is shown that heteroepitaxial InP cells with over 20% AM0 efficiency could be fabricated if dislocations are reduced to <105 cm-2
Keywords :
III-V semiconductors; dislocation density; electron-hole recombination; indium compounds; solar cells; surface electron states; 20 percent; InP solar cell; cell emitter thickness; dislocation density; heteroepitaxial solar cell efficiency; semiconductor; surface recombination velocity; Buffer layers; Costs; Density measurement; Gallium arsenide; Helium; Indium phosphide; MOCVD; Photovoltaic cells; Silicon; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169219
