• DocumentCode
    2526319
  • Title

    Influence of the dislocation density on the performance of heteroepitaxial indium phosphide solar cells

  • Author

    Jain, R.K. ; Flood, D.J.

  • Author_Institution
    NASA Lewis Res. Center, Cleveland, OH, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    250
  • Abstract
    Calculations are made to study the dependence of heteroepitaxial InP solar cell efficiency on dislocation density. Effects of surface recombination velocity and cell emitter thickness have been considered. Calculated results are compared with the available experimental results on representative InP solar cells. It is shown that heteroepitaxial InP cells with over 20% AM0 efficiency could be fabricated if dislocations are reduced to <105 cm-2
  • Keywords
    III-V semiconductors; dislocation density; electron-hole recombination; indium compounds; solar cells; surface electron states; 20 percent; InP solar cell; cell emitter thickness; dislocation density; heteroepitaxial solar cell efficiency; semiconductor; surface recombination velocity; Buffer layers; Costs; Density measurement; Gallium arsenide; Helium; Indium phosphide; MOCVD; Photovoltaic cells; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169219
  • Filename
    169219
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2526319