Surface melting model for Al reflow into submicron contact-holes and vias

Author

Hirose, K. ; Kikuta, K. ; Yoshida, T.

Author_Institution

ULSI Device Dev. Lab. NEC Corp., Kanagawa, Japan

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

557

Lastpage

560

Abstract

A new simulation model for Al reflow into submicron contact-holes and vias is developed for the first time. This model, the surface melting model, introduces surface tension driven mass transport of Al in a surface reflow layer whose thickness depends on the reflow temperature. Using this model in a quasi-3D computational fluid dynamics code, evolution of 3D Al surface topography during the reflow is accurately predicted from the initial Al step coverage and window curvature for a contact-hole. This physically based simulation identifies nature of the Al reflow.<>

Keywords

aluminium; fluid dynamics; integrated circuit metallisation; melting; semiconductor process modelling; simulation; surface tension; surface topography; 3D Al surface topography; Al; Al reflow; Al step coverage; quasi-3D computational fluid dynamics code; reflow temperature; simulation model; submicron contact-holes; submicron vias; surface melting model; surface tension driven mass transport; window curvature; Artificial intelligence; Computational fluid dynamics; Computational modeling; National electric code; Semiconductor device modeling; Stress; Surface tension; Surface topography; Temperature dependence; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383346

Filename

383346