Title :
The slow relaxation of capacitance in ferroelectric devices under electrical pulse influence
Author :
Tumarkin, A.V. ; Razumov, S.V. ; Gagarin, A.G. ; Gaidukov, M.M. ; Kozyrev, A.B.
Author_Institution :
St. Petersburg Electrotech. Univ., St. Petersburg
Abstract :
The influence of technology parameters and construction of ferroelectric capacitors on capacitance relaxation mechanisms in BaxSr1-xTiO3 (BSTO) varactors prepared by ion-plasma deposition technique has been investigated. The slow relaxation phenomenon (10divide100 s) in ferroelectric elements in paraelectric state can be explained by the presence of space charge localized on trapping defects in high defected interface layer electrode-ferroelectric.
Keywords :
barium compounds; capacitance; ferroelectric capacitors; strontium compounds; titanium compounds; varactors; BSTO varactors; capacitance slow relaxation; electrical pulse influence; ferroelectric capacitors; ferroelectric devices; ion-plasma deposition technique; Capacitance measurement; Capacitors; Charge carriers; Electrodes; Ferroelectric devices; Ferroelectric materials; Polarization; Pulse measurements; Space charge; Voltage;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412753
