Title :
Silicon microspeaker with out-of-plane displacement
Author :
Glacer, Christoph ; Dehe, A. ; Tumpold, David ; Laur, Rainer
Author_Institution :
Inst. for Electromagn. Theor., Univ. of Bremen, Bremen, Germany
Abstract :
In this paper a new way of increasing the enclosed air volume between the stator and the membrane of an electrostatic loudspeaker is introduced. Instead of using a thicker sacrificial layer, a stress-induced self-raising of the stator is utilized. Corrugation grooves in combination with highly tensile silicon nitride rings are causing a deflection of the stator after the release etch. For a stator diameter of 1 mm an out of plane deflection of up to 59 μm could be measured. On the electrical side, a pull-in voltage between 4 V and 16 V for the membrane and 27 V to 67 V for different stator variants was detected. In the free-field, a sound pressure level of 50 dB SPL at 10 kHz in 10 cm distance was measured for a small array. Variations of design and layout as well as technology parameters were varied to determine the ideal system with regard to maximum deflection, displaced volume and mechanical stability.
Keywords :
elemental semiconductors; loudspeakers; silicon; silicon compounds; stators; Si; SiN; electrostatic loudspeaker; enclosed air volume; out-of-plane displacement; silicon microspeaker; size 1 mm; sound pressure level; stator; stress-induced self-raising; tensile silicon nitride rings; thicker sacrificial layer; voltage 16 V; voltage 27 V to 67 V; voltage 4 V; Electrostatics; Layout; Loudspeakers; Micromechanical devices; Sensors; Silicon compounds; Stators;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2014 9th IEEE International Conference on
Conference_Location :
Waikiki Beach, HI
DOI :
10.1109/NEMS.2014.6908749