DocumentCode :
2526397
Title :
Comprehensive RTP modeling and simulation including thermal stress analysis and feature size optical effects
Author :
Kolpakov, A.V. ; Makhviladze, T.M. ; Panjukhin, A.V. ; Volchek, O.S. ; Erofeev, A.F. ; Orlowski, M.
Author_Institution :
SOFT-TEC, Acad. of Sci., Moscow, Russia
fYear :
1994
fDate :
11-14 Dec. 1994
Firstpage :
541
Lastpage :
544
Abstract :
A comprehensive simulation capability to describe RTP related issues has been developed. The simulator describes: 1) The radiative heat transfer in 3D with cylindric symmetry by combined zonal-Monte-Carlo method for arbitrary geometry and for various boundary conditions. The spectrum of tungsten-halogen lamp is modeled realistically and the software allows for analysis of multivariable independent lamp control; 2) Conductive heat transfer in the patterned wafer as a function of patterns (3D representation-crucial for stress analysis) and in the chamber walls (important for temperature uniformity from run to run); 3) 3D wafer warpage and thermal stress analysis of the wafer treated as a laminated plate; 4) Electromagnetic wave interaction with the object of a size comparable to the wave length of radiation for multi-layered nonplanar structures including steps and trenches; 5) Evaluation of emissivity of the wafer with deposited films for optical pyrometry. The software has been applied to various situations of which selected subsequent examples demonstrate its capability.<>
Keywords :
Monte Carlo methods; deformation; heat conduction; heat radiation; rapid thermal processing; semiconductor process modelling; simulation; stress analysis; temperature distribution; thermal analysis; thermal stresses; 3D wafer warpage; RTP modeling; RTP simulation; boundary conditions; conductive heat transfer; cylindric symmetry; electromagnetic wave interaction; feature size optical effects; laminated plate; multilayered nonplanar structures; multivariable independent lamp control; optical pyrometry; patterned wafer; radiative heat transfer; software; steps; thermal stress analysis; trench; tungsten-halogen lamp model; wafer emissivity; zonal-Monte-Carlo method; Boundary conditions; Electromagnetic analysis; Geometry; Heat transfer; Lamps; Optical films; Pattern analysis; Semiconductor device modeling; Solid modeling; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-2111-1
Type :
conf
DOI :
10.1109/IEDM.1994.383350
Filename :
383350
Link To Document :
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