Design and test at room temperature of the first silicon drift detector with on-chip electronics

Author

Hartmann, R. ; Hauff, D. ; Krisch, S. ; Lechner, P. ; Lutz, G. ; Richter, R.H. ; Seitz, H. ; Struder, L. ; Bertuccio, G. ; Fasoli, L. ; Fiorini, C. ; Gatti, E. ; Longoni, A. ; Pinotti, E. ; Sampietro, M.

Author_Institution

MPI Halbleiterlabor, Munchen, Germany

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

535

Lastpage

538

Abstract

The layout and the performance of the first silicon drift detector with on-chip electronics are presented. The peculiar characteristics of this device are the small detector capacitance and the direct integration of the front-end transistor on the detector chip. High resolution spectroscopy measurements carried out at room temperature are shown. The topology of a novel multianode drift detector suited for high count rate experiments is introduced.<>

Keywords

capacitance; detector circuits; elemental semiconductors; monolithic integrated circuits; nuclear electronics; silicon radiation detectors; Si; detector capacitance; detector chip; drift detector; high count rate experiments; high resolution spectroscopy measurements; multianode drift detector; onchip electronics; room temperature operation; Anodes; Capacitance; Electronic equipment testing; Electrons; Ionizing radiation; Radiation detectors; Semiconductor radiation detectors; Silicon radiation detectors; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383351

Filename

383351