Molecular dynamics investigation of radiation damage in semiconductors

Results of a molecular dynamics investigation of the effects of radiation damage on the crystallographic structure of semiconductors are reported. In particular, the author considers the formation of point defects and small defect complexes in silicon at the end of a radiation damage cascade. The calculations described make use of the equivalent crystal theory of J.R. Smith and A. Banerjea (1988). Results on the existence of an atomic displacement threshold, the defect formation energy, and some crystallographic information on the defects observed are reported