Title :
ECR plasma oxidation effects on performance and stability of polysilicon thin film transistors
Author :
Jung-Yeal Lee ; Chul-Hi Han ; Choong-Ki Kim
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Energy Res. Inst., Taejon, South Korea
Abstract :
Electron cyclotron resonance (ECR) plasma thermal oxide has been investigated as a gate insulator of poly-Si TFT´s. The ECR plasma thermal oxide grown on poly-Si film shows good electrical characteristics and renders a smooth interface with the poly-Si film. The fabricated poly-Si TFTs, even without plasma hydrogenation, show high performance characteristics. Both as-fabricated and plasma hydrogenated TFT´s exhibit only a small threshold voltage shift (/spl Delta/V/sub th/<0.3 V) after 5/spl times/10/sup 4/ sec electrical stress in the saturation region and linear region (T/sub ox/=42 nm, V/sub gs/=15 V, V/sub ds/=0 V/spl sim/15 V).<>
Keywords :
MOSFET; elemental semiconductors; oxidation; plasma deposited coatings; silicon; stability; surface topography; thin film transistors; ECR plasma oxidation effects; ECR plasma thermal oxide; Si-SiO/sub 2/; electrical characteristics; electron cyclotron resonance; gate insulator; linear region; poly-Si TFT; poly-Si film; polysilicon TFT; saturation region; smooth interface; stability; thin film transistors; threshold voltage shift; Cyclotrons; Electric variables; Electrons; Insulation; Oxidation; Plasma properties; Plasma stability; Rendering (computer graphics); Resonance; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383354
