Physics and applications of low-dimensional organic thin-film transistors

Author

Dodabalapur, A. ; Katz, H.E. ; Torsi, L.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

515

Lastpage

518

Abstract

We describe the electrical characteristics of thin film transistors with active layers made with /spl alpha/-hexathienylene. The on-conductance in these transistors is two-dimensional. The mobility of field induced carriers and the shape of the current-voltage characteristics depend on the channel length. With interdigitated source-drain regions we have achieved on/off ratios of more than 10/sup 5/.<>

Keywords

carrier mobility; insulated gate field effect transistors; organic semiconductors; thin film transistors; /spl alpha/-hexathienylene active layers; channel length; current-voltage characteristics; electrical characteristics; field induced carrier mobility; interdigitated source-drain regions; low-dimensional organic TFT; on-conductance; thin-film transistors; Conducting materials; Conductivity; Current-voltage characteristics; Dielectric substrates; Gold; Organic thin film transistors; Physics; Polymers; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383356

Filename

383356

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2526493