Combination of focused ion beam (FIB) and transmission electron microscopy (TEM) as sub-0.25 μm defect characterization tool

Author

Doong, Yih-Yuh ; Fu, Jui-Mei ; Hsieh, Young-Fen

Author_Institution

United Microelectron. Corp., Hsinchu, Taiwan

fYear

1997

fDate

21-25 Jul 1997

Firstpage

80

Lastpage

85

Abstract

A sub-0.25 μm defect characterization study was conducted by using in-line inspection machines to locate defects and focused ion beam system (FIB) equipped with a navigation tool to generate cross-sectional transmission electron microscopy (TEM) samples^4-8. Two failure analysis cases regarding invisible defects in optical microscope were reported in this work. One described the micro-trench formed at the bird´s beak of field oxide, and the other one illustrated the etching pit formation during Poly-Si etching process

Keywords

VLSI; etching; failure analysis; focused ion beam technology; inspection; integrated circuit testing; transmission electron microscopy; bird´s beak; cross-sectional transmission electron microscopy; defect characterization tool; etching pit formation; failure analysis cases; field oxide; focused ion beam; in-line inspection machines; micro-trench; navigation tool; polysilicon etching process; Character generation; Electron beams; Electron optics; Etching; Failure analysis; Inspection; Ion beams; Navigation; Optical microscopy; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Print_ISBN

0-7803-3985-1

Type

conf

DOI

10.1109/IPFA.1997.638125

Filename

638125