Title :
Integrated Passive Devices on Through Silicon Interposer with Re-distribution Layers
Author :
Cheng Jin ; Katti, G. ; Songbai Zhang
Author_Institution :
Sch. of Inf. & Electron., Beijing Inst. of Technol., Beijing, China
Abstract :
This paper presents the design, integration and characterization of integrated passive devices (IPDs) on low cost through silicon interposer (LC-TSI). The performances of symmetrical spiral and 3D inductors are presented and analyzed in this paper. Realizing the integration of MIM capacitor with polymer-based RDL process, Ti/Ta/TaN resistors and high-Q inductors into LC-TSI platform fabrication together is discussed. The performance of these structures is given and the results show that the TSI platform is an attractive and promising method as a carrier to design IPDs.
Keywords :
MIM devices; inductors; passive networks; tantalum; tantalum compounds; three-dimensional integrated circuits; titanium; 3D inductor; IPD; LC-TSI platform fabrication; MIM capacitor; Ti-Ta-TaN; high-Q inductor; integrated passive device; low cost through silicon interposer; metal-insulator-metal capacitor; polymer-based RDL process; redistribution layer; Inductors; MIM capacitors; Q-factor; Resistors; Silicon; Spirals; Three-dimensional displays; 3D symmetrical inductor; MIM capacitor; RLC integration; integrated passive device (IPD); low-cost through silicon interposer (LC-TSI);
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2014 IEEE 16th
Conference_Location :
Singapore
DOI :
10.1109/EPTC.2014.7028270
