Saturation velocity and velocity overshoot of inversion layer electrons and holes

In this paper we address the effect of a wide range of parameters on the high-field transport of inversion layer electrons and holes. The studied parameters include substrate doping level, surface micro-roughness, nitridation of the gate oxide, and device channel length. Our findings point to electron velocity overshoot at room temperature, dependence of electron and hole saturation velocity on nitridation of the gate oxide, and relative insensitivity of electron and hole mobility and saturation velocity to moderate surface roughness.<>