DocumentCode :
2526634
Title :
Dielectric charging process in AlN RF-MEMS capacitive switches
Author :
Papaioannou, George J. ; Lisec, Tomas
Author_Institution :
Nat. Kapodistrian Univ. of Athens, Athens
fYear :
2007
fDate :
8-10 Oct. 2007
Firstpage :
540
Lastpage :
543
Abstract :
The paper investigates the electrical properties of magnetron sputtered AlN in view of application in RF-MEMS capacitive switches. The assessment is performed with the aid of application of thermally stimulate polarization currents in MIM capacitors and temperature dependence of device capacitance. The study reveals the presence of a surface charge, which is smaller than the expected from material spontaneous polarization, but definitely is responsible for the low degradation rate under certain bias polarization life tests.
Keywords :
MIM devices; capacitors; switches; AlN RF-MEMS capacitive switches; MIM capacitors; bias polarization life tests; device capacitance; dielectric charging process; magnetron sputtered AlN; thermally stimulate polarization currents; Capacitance; Dielectrics; MIM capacitors; Magnetic materials; Magnetic properties; Magnetic switching; Polarization; Radiofrequency microelectromechanical systems; Switches; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
Type :
conf
DOI :
10.1109/EMICC.2007.4412769
Filename :
4412769
Link To Document :
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