• DocumentCode
    2526643
  • Title

    Different nonlinear conduction mechanism between α-SiC and β-SiC

  • Author

    Enguang, He ; Shoutian, Chen ; Xiaogang, Wang

  • Author_Institution
    Xi´´an Jiaotong Univ., China
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    922
  • Abstract
    The nonlinear electrical conductivity of β-SiC and α-SiC was investigated. β-SiC has an excellent nonlinear electrical conductivity when the particle size varies from 14~21 μm. Compared with α-SiC, the parallel particle size β-SiC micro-powder has lower resistance and greater nonlinear electrical conduction coefficient which is marked by β. The difference of electrical conductivity between β-SiC and α-SiC is interpreted from the crystal structure and shape. It is shown that the cubic crystal structure β-SiC has smaller contact area than hexagonal α-SiC with induced higher contact potential barrier. Under high voltage, the electrical conduction mechanism of the tetrahedral parallel configuration β-SiC crystal is more complex than the anti-parallel configuration α-SiC crystal
  • Keywords
    crystal structure; high field effects; particle size; silicon compounds; wide band gap semiconductors; α-SiC; β-SiC; β-SiC micro-powder; 14 to 21 mum; SiC; contact area; contact potential barrier; crystal structure; cubic crystal structure; electrical conductivity; hexagonal α-SiC; high voltage; nonlinear conduction; nonlinear electrical conductivity; particle size; Circuit testing; Copper; Electrodes; Glass; Instruments; Insulation testing; Linearity; Powders; Silicon carbide; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    0-7803-5459-1
  • Type

    conf

  • DOI
    10.1109/ICPADM.2000.876381
  • Filename
    876381