DocumentCode :
2526643
Title :
Different nonlinear conduction mechanism between α-SiC and β-SiC
Author :
Enguang, He ; Shoutian, Chen ; Xiaogang, Wang
Author_Institution :
Xi´´an Jiaotong Univ., China
Volume :
2
fYear :
2000
fDate :
2000
Firstpage :
922
Abstract :
The nonlinear electrical conductivity of β-SiC and α-SiC was investigated. β-SiC has an excellent nonlinear electrical conductivity when the particle size varies from 14~21 μm. Compared with α-SiC, the parallel particle size β-SiC micro-powder has lower resistance and greater nonlinear electrical conduction coefficient which is marked by β. The difference of electrical conductivity between β-SiC and α-SiC is interpreted from the crystal structure and shape. It is shown that the cubic crystal structure β-SiC has smaller contact area than hexagonal α-SiC with induced higher contact potential barrier. Under high voltage, the electrical conduction mechanism of the tetrahedral parallel configuration β-SiC crystal is more complex than the anti-parallel configuration α-SiC crystal
Keywords :
crystal structure; high field effects; particle size; silicon compounds; wide band gap semiconductors; α-SiC; β-SiC; β-SiC micro-powder; 14 to 21 mum; SiC; contact area; contact potential barrier; crystal structure; cubic crystal structure; electrical conductivity; hexagonal α-SiC; high voltage; nonlinear conduction; nonlinear electrical conductivity; particle size; Circuit testing; Copper; Electrodes; Glass; Instruments; Insulation testing; Linearity; Powders; Silicon carbide; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
0-7803-5459-1
Type :
conf
DOI :
10.1109/ICPADM.2000.876381
Filename :
876381
Link To Document :
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