DocumentCode
2526645
Title
A comprehensive study of MOSFET electron mobility in both weak and strong inversion regimes
Author
Koga, J. ; Takagi, S. ; Toriumi, A.
Author_Institution
ULSI Res. Lab., Toshiba Corp., Kawasaki, Japan
fYear
1994
fDate
11-14 Dec. 1994
Firstpage
475
Lastpage
478
Abstract
The physical origins of both Coulomb scattering and surface roughness scattering were investigated experimentally. It was demonstrated that the screening effect of Coulomb scattering is significantly different between interface charges and substrate impurities. It was also observed for the first time that there is a weak E/sub eff/ dependence of /spl mu//sub sr/ in MOSFETs with a long roughness correlation length comparable to the electron wavelength.<>
Keywords
MOSFET; electron mobility; inversion layers; semiconductor device models; surface topography; Coulomb scattering; MOSFET; electron mobility; interface charges; inversion regimes; roughness correlation length; screening effect; substrate impurities; surface roughness scattering; Capacitance-voltage characteristics; Density measurement; Electron mobility; Impurities; Length measurement; MOSFET circuits; Rough surfaces; Scattering; Surface roughness; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-2111-1
Type
conf
DOI
10.1109/IEDM.1994.383365
Filename
383365
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