Title :
A comprehensive study of MOSFET electron mobility in both weak and strong inversion regimes
Author :
Koga, J. ; Takagi, S. ; Toriumi, A.
Author_Institution :
ULSI Res. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
The physical origins of both Coulomb scattering and surface roughness scattering were investigated experimentally. It was demonstrated that the screening effect of Coulomb scattering is significantly different between interface charges and substrate impurities. It was also observed for the first time that there is a weak E/sub eff/ dependence of /spl mu//sub sr/ in MOSFETs with a long roughness correlation length comparable to the electron wavelength.<>
Keywords :
MOSFET; electron mobility; inversion layers; semiconductor device models; surface topography; Coulomb scattering; MOSFET; electron mobility; interface charges; inversion regimes; roughness correlation length; screening effect; substrate impurities; surface roughness scattering; Capacitance-voltage characteristics; Density measurement; Electron mobility; Impurities; Length measurement; MOSFET circuits; Rough surfaces; Scattering; Surface roughness; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383365
