Title :
Electro-optical modulation and photoinduced absorption effects on a CMOS-compatible α-Si:H/α-SiCN multistack waveguide
Author :
Rao, Sandro ; Della Corte, Francesco G.
Author_Institution :
Dept. of Inf. Sci., Mediterranea Univ., Reggio Calabria, Italy
Abstract :
In this paper we report results on a field-effect induced light modulation at λ = 1.55 μm in a high-index-contrast waveguide based on a multisilicon-on-insulator (MSOI) platform. The device is realized with the hydrogenated amorphous silicon (α-Si:H) technology and it is suitable for monolithic integration in a CMOS Integrated Circuit. The device exploits the free carrier optical absorption electrically induced in the semiconductor core waveguide. The dynamic behaviour of the device was experimentally and theoretically analyzed in presence of a visible illumination showing a link between the photogeneration and the free carriers provided by doped α-Si:H layers. The core waveguide contains several thin dielectric films of amorphous silicon carbonitride (α-SiCN) embedded along its thickness highly enhancing the absorbing action of the modulator held in the on-state.
Keywords :
dielectric thin films; electro-optical modulation; hydrogenation; light absorption; optical waveguides; CMOS-compatible multistack waveguide; electrooptical modulation; field-effect induced light modulation; free carrier optical absorption; high-index-contrast waveguide; hydrogenated amorphous silicon technology; multisilicon-on-insulator; photoinduced absorption effects; semiconductor core waveguide; thin dielectric films; Absorption; Amorphous silicon; CMOS technology; Electrooptic modulators; Electrooptical waveguides; Integrated circuit technology; Optical modulation; Optical waveguide theory; Optical waveguides; Semiconductor waveguides;
Conference_Titel :
MELECON 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference
Conference_Location :
Valletta
Print_ISBN :
978-1-4244-5793-9
DOI :
10.1109/MELCON.2010.5476363
