Title :
Highly stable chemical N-doping of graphene nanomesh FET
Author :
Al-Mumen, Haider ; Lixin Dong ; Wen Li
Author_Institution :
Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA
Abstract :
N-type doping of graphene with long-term air stability represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method that uses SU-8 photoresist as a doping and encapsulating material to enable highly air-stable n-type semiconducting properties of graphene. The SU-8 resist simultaneously serves as an effective electron dopant, a dielectric medium, and an excellent encapsulating layer. The air-stable n-type characteristics of the as-doped graphene were verified by Raman spectra and transport properties. The SU-8 doping has minimum damage to the hexagonal lattice of graphene and can be reversed by removing the uncrosslinked SU-8 resist.
Keywords :
Raman spectra; doping profiles; field effect transistors; graphene; photoresists; semiconductor doping; Raman spectra; SU-8 photoresist; dielectric medium; doping material; electron dopant; encapsulating layer; encapsulating material; graphene electronics; graphene nanomesh FET; hexagonal lattice; highly stable chemical N-doping; long term air stability; reversible doping method; transport properties; Doping; Graphene; Lattices; Logic gates; Resists; Thermal stability; Transistors; doping; graphene; nanomesh; transistor;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2014 9th IEEE International Conference on
Conference_Location :
Waikiki Beach, HI
DOI :
10.1109/NEMS.2014.6908762