Orientation of PZT thin films prepared by sol-gel techniques

The authors study the crystal orientation of PZT thin films fabricated by using sol-gel routes on (111) Pt/Ti/SiO₂/Si substrates. The crystallization of PZT thin films was performed at 650°C for 30 minutes by using rapid thermal annealing (RTA) routes. XRD analysis was used to identify the film orientation. The morphology was examined using SEM. The different ratios of Zr/Ti, the lead contents in precursor solutions, the modification of the PZT precursor and the film thickness have obvious effects on the formation of (111) or (100) preferred and random-oriented PZT thin films. It is concluded that controlling the orientation of PZT thin films can be realized by using the sol-gel routes and normal Pt/Ti/SiO₂/Si substrates