Real time measurement of transients and electrode edge effects for plasma charging induced damage

Author

Shawming Ma ; McVittie, J.P.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

463

Lastpage

466

Abstract

Plasma charging behavior is monitored in-situ by a newly developed wafer charging probe. Both charging voltage measurements and damage studies show that more charging is evident near the electrode edge even without the presence of any magnetic fields. Moreover, plasma charging is seen to consist of both transient and steady state components. Both plasma turn-on and turn-off can cause short term transients due to nonuniformity by plasma initiation and termination. The steady state charging voltage is strongly affected by gas composition, pressure and rf power.<>

Keywords

VLSI; integrated circuit measurement; integrated circuit technology; probes; sputter etching; voltage measurement; RF power; VLSI manufacture; charging voltage measurements; electrode edge effects; gas composition; plasma charging behavior; plasma charging induced damage; plasma etching; plasma initiation; short term transients; steady state charging voltage; steady state components; transient components; wafer charging probe; Distortion measurement; Electrodes; Etching; Impedance measurement; Plasma applications; Plasma measurements; Probes; Steady-state; Virtual colonoscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383368

Filename

383368