DocumentCode
252686
Title
W2W permanent stacking for 3D system integration
Author
Lan Peng ; Soon-Wook Kim ; Soules, M. ; Gabriel, M. ; Zoberbier, M. ; Sleeckx, E. ; Struyf, H. ; Miller, A. ; Beyne, E.
Author_Institution
IMEC, Heverlee, Belgium
fYear
2014
fDate
3-5 Dec. 2014
Firstpage
1
Lastpage
4
Abstract
In this paper, we present advances in 300mm wafer-to-wafer (W2W) oxide-oxide bonding for high density 3D interconnect application. A CMOS compatible low temperature oxide-oxide bonding method has been developed which yields consistent void-free bonding. In addition, sub-micron W2W alignment accuracy has been demonstrated with standalone test materials using an integrated permanent bonding platform.
Keywords
CMOS integrated circuits; integrated circuit interconnections; three-dimensional integrated circuits; wafer bonding; 3D system integration; CMOS compatible low temperature oxide-oxide bonding method; W2W permanent stacking; high density 3D interconnect application; void-free bonding; wafer-to-wafer oxide-oxide bonding; Annealing; Bonding; Silicon; Surface contamination; Surface treatment; Three-dimensional displays; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC), 2014 IEEE 16th
Conference_Location
Singapore
Type
conf
DOI
10.1109/EPTC.2014.7028287
Filename
7028287
Link To Document