Epitaxial diamond Schottky barrier diode with on/off current ratios in excess of 10/sup 7/ at high temperatures

Author

Ebert, W. ; Vescan, A. ; Borst, T.H. ; Kohn, E.

Author_Institution

Dept. of Electron. Devices & Circuits, Ulm Univ., Germany

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

419

Lastpage

422

Abstract

Au-Schottky diodes have been fabricated on epitaxially grown diamond films on highly p-doped substrates. The forward characteristics show a low ideality factor and low series resistance. In reverse, a steadily increasing temperature activated excess leakage current is observed. The analysis of this region has lead to a new defect model. These defects can be in part passivated by plasma pretreatment, leading to significantly lower reverse currents and to the highest ever reported on/off current ratios for epitaxial diamond diodes of up to 10/sup 9/ at high temperature.<>

Keywords

Schottky diodes; diamond; elemental semiconductors; gold; heavily doped semiconductors; leakage currents; passivation; semiconductor device models; semiconductor epitaxial layers; solid-state rectifiers; vapour phase epitaxial growth; Au-C; Au-Schottky diodes; defect model; epitaxial diamond Schottky barrier diode; epitaxially grown diamond films; forward characteristics; high temperature; highly p-doped substrates; low ideality factor; low series resistance; on/off current ratios; passivation; plasma pretreatment; reverse characteristics; temperature activated excess leakage current; Argon; Cleaning; Doping; Epitaxial layers; Leakage current; Plasma temperature; Schottky barriers; Schottky diodes; Substrates; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383378

Filename

383378