Title :
Vertical Schottky barrier diodes on 3C-SiC grown on Si
Author :
Shenoy, P. ; Moki, A. ; Baliga, B.J. ; Alok, D. ; Wongchotigul, K. ; Spencer, M.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Abstract :
Characteristics of vertical Schottky barrier diodes (SBD) fabricated on N/sup -N//sup +/ 3C-SiC grown on N/sup +/Si substrate are reported for the first time. The diodes exhibited a soft breakdown at /spl sim/85 V which, to the best of our knowledge is the highest reported breakdown voltage for 3C-SiC SBD´s. The barrier height of the Pt Schottky contact was determined to be /spl sim/0.85 eV. The low forward voltage drop of as-deposited Pt SBD´s (/spl sim/0.85 V at 100 A/cm/sup 2/) demonstrates that the N/sup +/SiC/N/sup +/Si heterojunction is highly conductive. The specific resistance of the heterojunction (R/sub on,HJ/) was experimentally measured and an upper bound of 8/spl times/10/sup -6/ /spl Omega/-cm/sup 2/ was obtained. R/sub on,HJ/ was also extracted by one dimensional numerical simulations to be /spl sim/8/spl times/10/sup -8/ /spl Omega/-cm/sup 2/. These low values for R/sub on,HJ/ demonstrate that vertical power device structures are feasible on 3C-SiC grown on Si.<>
Keywords :
Schottky diodes; electric breakdown; elemental semiconductors; platinum; power semiconductor diodes; semiconductor device models; semiconductor materials; silicon; silicon compounds; 0.85 eV; 85 V; Pt-SiC-Si; Pt/SiC/Si; barrier height; breakdown voltage; forward voltage drop; one dimensional numerical simulations; soft breakdown; specific resistance; vertical Schottky barrier diodes; vertical power device structures; Breakdown voltage; Buffer layers; Commercialization; Heterojunctions; Low voltage; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Substrates;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383380
