DocumentCode :
252691
Title :
Nanoscaled biological gated field effect transistors for cytogenetic analysis
Author :
Kwasny, D. ; Dimaki, M. ; Andersen, K.B. ; Zulfiqar, A. ; Tumer, Z. ; Svendsen, W.E.
Author_Institution :
DTU Nanotech, Lyngby, Denmark
fYear :
2014
fDate :
13-16 April 2014
Firstpage :
130
Lastpage :
134
Abstract :
Cytogenetic analysis is the study of chromosome structure and function, and is often used in cancer diagnosis, as many chromosome abnormalities are linked to the onset of cancer. A novel label free detection method for chromosomal translocation analysis using nanoscaled field effect transistors (FET) is presented here. The FET is gated by the hybridization of the target DNA on the semiconducting nanowire. The results show an extreme sensitivity to the hybridization process, so that the hybridization and dehybridisation can be followed in real time. The nanoscaled FET is made of polysilicon using standard UV lithography enabling batch processing of the sensors.
Keywords :
DNA; cancer; cellular biophysics; field effect transistors; genetics; genomics; nanomedicine; nanowires; patient diagnosis; cancer diagnosis; cancer onset; chromosomal translocation analysis; chromosome abnormalities; chromosome function; chromosome structure; cytogenetic analysis; dehybridisation; hybridization process; label free detection method; nanoscaled FET; nanoscaled biological gated field effect transistors; polysilicon; semiconducting nanowire; sensor batch processing; standard UV lithography; target DNA; Biological cells; Biosensors; DNA; Impedance; Peptides; Probes; Silicon; DNA biosensor; chromosome translocations; silicon nanowires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2014 9th IEEE International Conference on
Conference_Location :
Waikiki Beach, HI
Type :
conf
DOI :
10.1109/NEMS.2014.6908775
Filename :
6908775
Link To Document :
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