DocumentCode
2526922
Title
Device integration for ESD robustness of high voltage power MOSFETs
Author
Duvvury, Charvaka ; Rodriguez, J. ; Jones, C. ; Smayling, M.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1994
fDate
11-14 Dec. 1994
Firstpage
407
Lastpage
410
Abstract
The ESD robustness of a power MOSFET device is addressed in this paper. It is shown that by a novel device integration of the power output transistor with SCR, the ESD performance can be improved from less than 2 kV to greater than 6 kV. This is accomplished with no impact on the transistor performance or its application in circuit design.<>
Keywords
electrostatic discharge; power MOSFET; semiconductor device reliability; thyristors; 6 kV; ESD robustness; SCR; circuit design; device integration; high voltage power MOSFETs; power output transistor; transistor performance; Automotive engineering; Electrostatic discharge; Instruments; MOS devices; MOSFETs; Power dissipation; Power transistors; Robustness; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-2111-1
Type
conf
DOI
10.1109/IEDM.1994.383381
Filename
383381
Link To Document