New (super) self aligned MOS controlled thyristors, (S)SAMCTs, switching 20 A at 4 kV

Author

Dettmer, H. ; Fichtner, W. ; Bauer, P.

Author_Institution

Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

395

Lastpage

398

Abstract

New MOS controlled thyristor structures, called (Super) Self Aligned MOS Controlled Thyristors, (S)SAMCTs, have been fabricated and characterized. A simplified cathode structure in which all critical layers are self aligned enables the fabrication of reliable large area devices with reduced technology complexity. Small experimental devices show equivalent electrical performance compared to conventional MCTs. Successfully fabricated large area (1 cm/sup -2/) SAMCTs are able to turn off 20 A at 4 kV in 5 /spl mu/s under inductive load without any snubber.<>

Keywords

MIS devices; MOS-controlled thyristors; semiconductor switches; semiconductor technology; (S)SAMCTs; (super) self aligned MOS controlled thyristors; 20 A; 4 kV; 5 mus; cathode structure; critical layers; electrical performance; inductive load; large area devices; self aligned layers; technology complexity; Costs; FETs; Fabrication; Graphics; Laboratories; MOSFET circuits; Silicon compounds; Snubbers; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383384

Filename

383384