Charge injection transistors and logic elements in Si/Si/sub 1-x/Ge/sub x/ heterostructures

Charge injection transistors and logic elements have been successfully implemented in a Si/Si/sub 0.7/Ge/sub 0.3/ heterostructure grown by rapid thermal epitaxy on a Si substrate. Shallow p+ source and drain ohmic contacts are obtained by a boron diffusion from a selectively deposited boron doped Ge layer. Room temperature operation of the charge injection transistor is demonstrated for the first time. High frequency measurements indicate a short circuit current gain cutoff frequency of 6 GHz.<>