On the triggering properties of high power SI-GaAs photoconductive switch

Author

Wei, Shi ; Qi, Li ; Erzhu, Chen ; Wei, Zhao ; Xiaowei, Sun ; Loy, Lam Yee

Author_Institution

Xi´´an Univ. of Technol., China

Volume

2

fYear

2000

fDate

2000

Firstpage

1012

Abstract

In this paper, experiments of an all-solid-state insulated semi-insulating GaAs ultrafast surface photoconductive semiconductor switch triggered by nanosecond and femtosecond laser are reported. Both linear and nonlinear modes of the 3 mm-gap GaAs PCSS were observed when triggered by the μJ nanosecond laser. The current could be as high as 560 A. The same device also revealed good temporal characteristics when triggered with a 76 MHz femtosecond laser. The rise time of the PCSS response is less than 200 ps, and is limited by the coaxial cable

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; laser beam applications; photoconducting switches; pulsed power switches; 200 ps; 3 mm; 560 A; 76 MHz; GaAs; PCSS response; all-solid-state insulated semi-insulating GaAs; coaxial cable; femtosecond laser triggering; high power SI-GaAs photoconductive switch; linear mode; nanosecond laser triggering; nonlinear mode; rise time; temporal characteristics; triggering properties; ultrafast surface photoconductive semiconductor switch; Electrodes; Gallium arsenide; Insulation; Laser radar; Optical pulses; Photoconducting devices; Photoconductivity; Semiconductor lasers; Space vector pulse width modulation; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on

Conference_Location

Xi´an

Print_ISBN

0-7803-5459-1

Type

conf

DOI

10.1109/ICPADM.2000.876403

Filename

876403