Title :
Multi emitter finger SiGe-HBTs with f/sub max/ up to 120 GHz
Author :
Schuppen, A. ; Gruhle, A. ; Erben, U. ; Kibbel, H. ; Konig, U.
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
Abstract :
Multi emitter finger silicon germanium heterojunction bipolar transistors (SiGe-HBTs) grown by MBE have been investigated by varying the collector design. No current crush effects have been observed for different transistor geometries. SiGe-HBTs with a 400 nm 2/spl times/10/sup 16/ cm/sup -3/ doped collector layers and 10 emitter fingers of 1 /spl mu/m/spl times/10 /spl mu/m exhibit a maximum oscillation frequency of 120 GHz and a power gain of 20 dB at 10 GHz. These are presently the highest values reported for silicon based transistors.<>
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; millimetre wave bipolar transistors; millimetre wave power transistors; molecular beam epitaxial growth; power bipolar transistors; semiconductor materials; 10 GHz; 120 GHz; 20 dB; EHF; HBT; MBE growth; SHF; SiGe; collector design variation; doped collector layers; heterojunction bipolar transistors; maximum oscillation frequency; multiemitter finger type; power gain; transistor geometries; Circuits; Doping; Electron devices; Etching; Fingers; Frequency; Gain; Germanium silicon alloys; Silicon germanium; Voltage;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383388
