Title :
Improved design methodology for a 2 GHz class-E hybrid power amplifier using packaged GaN-HEMTs
Author :
Flucke, J. ; Meliani, C. ; Schnieder, F. ; Heinrich, W.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin
Abstract :
This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm output power and 57% PAE, with drain efficiency as high as 62%. In addition to the large-signal simulation considerations, we discuss particularly the problem of input matching of the amplifier under class-E operation.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; gallium compounds; power HEMT; wide band gap semiconductors; GaN; GaN-HEMT; class-E hybrid power amplifier; drain efficiency; efficiency 57 percent; frequency 2 GHz; large-signal simulation considerations; Circuits; Design methodology; Frequency; Gallium nitride; HEMTs; Impedance matching; Microwave amplifiers; Operational amplifiers; Packaging; Power amplifiers;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412794
