Optimized Ge channel profiles for VLSI compatible Si/SiGe p-MOSFET´s

Author

Voinigescu, S.P. ; Salama, C.A.T. ; Noel, J.-P. ; Kamins, T.I.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

369

Lastpage

372

Abstract

Theoretical and experimental support is provided to demonstrate that, with the design constraint of a fixed Ge dose, the effective hole mobility and carrier confinement in SiGe MOSFET´s are maximized by employing positively graded triangular Ge profiles in the channel. Hole mobilities in excess of 400 cm/sup 2/Vs were obtained experimentally for transistors with 0-50% triangular Ge channel profiles. When compared to devices with rectangular Ge profiles, the MOSFET´s with triangular profiles demonstrated 30-40% improvement in mobility, transconductance and cutoff frequency. These results were observed for both MBE- and CVD-grown wafers.<>

Keywords

Ge-Si alloys; MOS integrated circuits; MOSFET; VLSI; doping profiles; elemental semiconductors; hole mobility; semiconductor materials; silicon; CVD-grown wafers; MBE-grown wafers; Si-SiGe; VLSI compatible PMOSFETs; carrier confinement; cutoff frequency; effective hole mobility; optimized Ge channel profiles; p-MOSFET; positively graded profiles; transconductance; transistors; triangular profiles; Boron; Carrier confinement; Councils; Germanium silicon alloys; Laboratories; MOSFET circuits; Scattering; Silicon germanium; Threshold voltage; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383390

Filename

383390