Title :
Novel transport simulation of vertically-grown MOSFETs by cellular automaton method
Author :
Rein, A. ; Zandler, G. ; Saraniti, M. ; Lugli, P. ; Vogl, P.
Author_Institution :
Dept. of Phys., Tech. Univ. Munchen, Garching, Germany
Abstract :
We present a theoretical study of vertically-grown silicon ultra-short FETs. For a gate length of 50 nm a transconductance of at least 1000 mS/mm and a maximum transit time frequency of 200 GHz are predicted. A sensitive influence of the doping profile on short channel effects is demonstrated. Our simulations are based on a new implementation of the cellular automata method, which provides a significant suppression of statistical errors. To take advantage of the high speed of the cellular automaton a fast multigrid-solver for the Poisson equation has been developed.<>
Keywords :
MOSFET; cellular automata; doping profiles; electronic engineering computing; elemental semiconductors; high field effects; semiconductor device models; silicon; simulation; 1000 mS/mm; 200 GHz; 50 nm; Poisson equation; Si; cellular automata method; doping profile; maximum transit time frequency; multigrid-solver; short channel effects; statistical errors suppression; transconductance; transport simulation; ultra-short gate length; vertically-grown MOSFETs; Automata; Doping profiles; Hot carrier effects; Lattices; MOSFETs; Monte Carlo methods; Nearest neighbor searches; Poisson equations; Silicon; Time frequency analysis;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383394
