Dopant-free CMOS: A new device concept

Author

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo

Author_Institution

Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt, Germany

fYear

2012

fDate

16-18 May 2012

Firstpage

1

Lastpage

3

Abstract

In this paper we report on a newly developed multigate nanowire (NW) based field-effect device (NWFET) where the transistor type is freely selectable by the application of a control-voltage, adding to design flexibility in integrated circuit fabrication. Moreover, the midgap Schottky-barrier source and drain contacts of the NWFET make it feasible for the usa in high temperature environments, since the devices posses both stability against high temperatures and low OFF-state current at the same time. This makes the presented NWFET a multi-purpose device for many specific circuit applications.

Keywords

CMOS integrated circuits; Schottky barriers; circuit stability; field effect devices; integrated circuit design; nanowires; temperature; NWFET; circuit application; control-voltage; design flexibility; dopant-free CMOS; drain contact; high temperature environment; integrated circuit fabrication; low OFF-state current; midgap Schottky-barrier source; multigate nanowire based field-effect device; multipurpose device; stability; transistor type; CMOS integrated circuits; Charge carrier processes; Inverters; Nanoscale devices; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2012 7th International Conference on

Conference_Location

Gammarth

Print_ISBN

978-1-4673-1926-3

Type

conf

DOI

10.1109/DTIS.2012.6232949

Filename

6232949