Feasibility study on in situ CCVD grown CNTs for field-effect power device applications

Author

Keyn, Martin ; Wessely, Pia Juliane ; Wessely, Frank ; Rispal, Lorraine ; Palm, Johannes ; Schwalke, Udo

Author_Institution

Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt, Germany

fYear

2012

fDate

16-18 May 2012

Firstpage

1

Lastpage

3

Abstract

In this paper we investigate the feasibility of carbon nanotubes (CNTs) for power applications. On the basis of a process which fabricates thousands of carbon nanotube field-effect transistors (CNTFETs) by means of catalytic chemical vapor deposition (CCVD) we will show that CNTFETs are capable to provide a sufficiently high current to drive a light-emitting diode (LED).

Keywords

carbon nanotube field effect transistors; chemical vapour deposition; light emitting diodes; power field effect transistors; CCVD; CNTFET; LED; carbon nanotube field-effect transistors; catalytic chemical vapor deposition; field-effect power device applications; light-emitting diode; Annealing; CNTFETs; Carbon nanotubes; Fabrication; Hydrogen; Palladium; Substrates; LED; carbon nanotube field-effect transistor; carbon nanotubes; catalytic chemical vapor deposition; power application;

fLanguage

English

Publisher

ieee

Conference_Titel

Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2012 7th International Conference on

Conference_Location

Gammarth

Print_ISBN

978-1-4673-1926-3

Type

conf

DOI

10.1109/DTIS.2012.6232952

Filename

6232952