DocumentCode :
2527275
Title :
Feasibility study on in situ CCVD grown CNTs for field-effect power device applications
Author :
Keyn, Martin ; Wessely, Pia Juliane ; Wessely, Frank ; Rispal, Lorraine ; Palm, Johannes ; Schwalke, Udo
Author_Institution :
Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt, Germany
fYear :
2012
fDate :
16-18 May 2012
Firstpage :
1
Lastpage :
3
Abstract :
In this paper we investigate the feasibility of carbon nanotubes (CNTs) for power applications. On the basis of a process which fabricates thousands of carbon nanotube field-effect transistors (CNTFETs) by means of catalytic chemical vapor deposition (CCVD) we will show that CNTFETs are capable to provide a sufficiently high current to drive a light-emitting diode (LED).
Keywords :
carbon nanotube field effect transistors; chemical vapour deposition; light emitting diodes; power field effect transistors; CCVD; CNTFET; LED; carbon nanotube field-effect transistors; catalytic chemical vapor deposition; field-effect power device applications; light-emitting diode; Annealing; CNTFETs; Carbon nanotubes; Fabrication; Hydrogen; Palladium; Substrates; LED; carbon nanotube field-effect transistor; carbon nanotubes; catalytic chemical vapor deposition; power application;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2012 7th International Conference on
Conference_Location :
Gammarth
Print_ISBN :
978-1-4673-1926-3
Type :
conf
DOI :
10.1109/DTIS.2012.6232952
Filename :
6232952
Link To Document :
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