Title :
Full analysis of alternating injection in SOI transistors: comparison to bulk transistors
Author :
Guichard, E. ; Cristoloveanu, S. ; Reimboid, G. ; Borel, G.
Author_Institution :
LETI, CEA-Technol. Avancees, Grenoble, France
Abstract :
A direct comparison is made between SOI and bulk devices by fabricating "bulk like" and thin SIMOX film transistors. This work was conducted using single and alternating hot carrier injection such as to prepare the understanding of circuit degradation. Weak inversion characteristics as well as back interface trapping, after alternating injection, are studied for the first time. It was found that the basic mechanisms are similar for the two studied technologies. However, several differences are observed during alternating injection: (i) transconductance recovery in thin film n-channel MOSFETs and (ii) a recovery of the off-state current in thin film p-channel MOSFETs.<>
Keywords :
MOSFET; SIMOX; electron traps; hole traps; hot carriers; interface states; semiconductor device reliability; thin film transistors; SOI transistors; Si; alternating injection; back interface trapping; bulk transistors; hot carrier injection; offstate current recovery; thin SIMOX film transistors; thin film n-channel MOSFETs; thin film p-channel MOSFETs; transconductance recovery; weak inversion characteristics; Charge carrier processes; Degradation; Electron traps; Hot carriers; MOSFET circuits; Semiconductor thin films; Stress; Thin film circuits; Thin film transistors; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383404
