Hot-hole-induced negative oxide charges in n-MOSFETs

We investigate the generation of electron traps by hole injection during hot-carrier stressing of n-MOSFETs. These generated electron traps are filled by an electron injection following the primary hole stress. The effect is proven and quantified by monitoring the detrapping kinetics in the multiplication factor and the charge pumping current. A method is presented that allows the quantification for reliability purposes. We conclude that under digital and analog operation conditions in which hole effects cannot completely be ruled out, this effect has to be considered.<>