Bias and temperature dependence of gate and substrate currents in n-MOSFETS at low drain voltage

This paper presents new experimental data on the bias and temperature dependence of the gate (I/sub G/) and substrate (I/sub B/) current of submicron MOSFETs at drain voltages much smaller than the Si-SiO/sub 2/ energy barrier (V/sub DS//spl Lt//spl Phi//sub bq//spl sime/3.15 V). In particular, we investigate the so called substrate current crossover effect, by reporting for the first time simultaneous measurements of I/sub G/ and I/sub B/ at V/sub DS/ lower than the crossover voltage (V/sub XOVER/), defined as the drain voltage below which the derivative of I/sub BMAX/ versus temperature (T) changes from negative to positive. The results indicate that I/sub B/ and I/sub G/ at low V/sub DS/ exhibit opposite temperature dependence thus raising new questions on the interpretation of the crossover effect.<>