Title :
High-frequency AC hot-carrier degradation in CMOS circuits
Author :
Vei-Han Chan ; Kopley, T.E. ; Marcoux, P. ; Chung, J.E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
The device degradation due to hot carriers generated under high-frequency circuit operation is studied in detail. Two new degradation phenomena are observed at these high frequencies. First, voltage overshoot, due to internal MOSFET parasitic capacitances, causes enhanced hot-carrier degradation. Second, the quasi-static approximation is found to be invalid at high frequencies. For NMOSFETs, fast voltage transitions are found to induce different degradation dynamics; for PMOSFETs, donor-type interface-state generation and electron detrapping both become significant.<>
Keywords :
CMOS integrated circuits; MOSFET; capacitance; electron traps; high-frequency effects; hot carriers; integrated circuit reliability; interface states; CMOS circuits; HF AC hot-carrier degradation; NMOSFETs; PMOSFETs; degradation phenomena; device degradation; donor-type interface-state generation; electron detrapping; fast voltage transitions; high-frequency circuit operation; internal MOSFET parasitic capacitances; quasi-static approximation; voltage overshoot; CMOS technology; Circuit testing; Degradation; Frequency; Hot carriers; Logic testing; MOS devices; MOSFETs; Stress; Voltage;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383408
