DocumentCode :
2527732
Title :
Circuit simulation of resonant tunneling devices using NDR-SPICE
Author :
Mohan, S. ; Mazumder, P. ; Haddad, G.I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear :
1994
fDate :
11-14 Dec. 1994
Firstpage :
229
Lastpage :
232
Abstract :
NDR-SPICE is an enhanced version of the SPICE-3E circuit simulator, containing models for several resonant tunneling devices, including Resonant Tunneling Diodes, Resonant Tunneling Transistors, Multiple Peak Resonant Tunneling Diodes, Resonant Tunneling Bipolar Transistors, and Resonant Tunneling Hot Electron Transistors. Provision has also been made for simulating any new S-terminal device with negative differential resistance (NDR) characteristics. All the device models use a table-driven approach where tables of the device I-V characteristics are obtained either through direct measurements or through quantum simulation. Linear interpolation is performed between the tabulated points but a quadratic interpolation option is also provided for MRTD models. The software contains improved algorithms for convergence with NDR and piecewise linear characteristics during DC and transient analysis. While all previously demonstrated and published models for these devices have been external or macro-models, the new models incorporated into NDR-SPICE are internal models, allowing for faster simulation with better control and accuracy.<>
Keywords :
SPICE; bipolar transistors; circuit analysis computing; digital simulation; hot electron transistors; integrated circuit design; interpolation; negative resistance devices; piecewise-linear techniques; resonant tunnelling devices; semiconductor device models; transient analysis; NDR-SPICE; S-terminal device; circuit simulator; device I-V characteristics; device models; internal models; macro-models; multiple peak resonant tunneling diodes; negative differential resistance; piecewise linear characteristics; quadratic interpolation option; quantum simulation; resonant tunneling bipolar transistors; resonant tunneling devices; resonant tunneling diodes; resonant tunneling hot electron transistors; resonant tunneling transistors; table-driven approach; transient analysis; Bipolar transistor circuits; Bipolar transistors; Circuit simulation; Diodes; Electrical resistance measurement; Electrons; Interpolation; RLC circuits; Resonant tunneling devices; Software algorithms;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-2111-1
Type :
conf
DOI :
10.1109/IEDM.1994.383424
Filename :
383424
Link To Document :
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