• DocumentCode
    2527755
  • Title

    Investigation of Plasma Recovery during Fall Time in Plasma Source Ion Implantation

  • Author

    Chung, K.J. ; Choe, J.M. ; Kim, G.H. ; Hwang, Y.S.

  • Author_Institution
    Dept. of Nucl. Eng., Seoul Nat. Univ.
  • Volume
    2
  • fYear
    2006
  • fDate
    25-29 Sept. 2006
  • Firstpage
    539
  • Lastpage
    542
  • Abstract
    To investigate the plasma recovery during the fall time of a high voltage pulse, a numerical model is developed by applying fluid equations for ions while assuming thermal equilibrium for electrons. In the model, effects of the circuit impedance of pulse system are taken into account. The numerical analysis reveals that the plasma recovery is affected by both the properties of plasma and internal impedance of pulse system. The experiments are conducted with a plane electrode immersed in RF-driven argon plasmas. When negative, high voltage pulses are applied to the electrode, the current and voltage waveforms are measured and compared with the simulation results. Effects of internal circuit impedance as well as plasma properties on plasma recovery during pulse fall time are discussed based on the experimental and numerical results
  • Keywords
    ion implantation; plasma materials processing; plasma sources; RF-driven argon plasmas; circuit impedance; current waveforms; fall time; fluid equations; high voltage pulse; plane electrode; plasma properties; plasma recovery; plasma source ion implantation; pulse system; thermal equilibrium; voltage waveforms; Circuits; Impedance; Ion implantation; Plasma immersion ion implantation; Plasma measurements; Plasma properties; Plasma simulation; Plasma sources; Plasma waves; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Discharges and Electrical Insulation in Vacuum, 2006. ISDEIV '06. International Symposium on
  • Conference_Location
    Matsue
  • ISSN
    1093-2941
  • Print_ISBN
    1-4244-0191-7
  • Electronic_ISBN
    1093-2941
  • Type

    conf

  • DOI
    10.1109/DEIV.2006.357357
  • Filename
    4194938