Microwave/millimeter-wave power HBTs with regrown extrinsic base layers

Author

Amamiya, Y. ; Chang-Woo Kim ; Goto, N. ; Tanaka, S. ; Furuhata, N. ; Shimawaki, H. ; Honjo, K.

Author_Institution

Microeletron. Res. Labs., NEC Corp., Ibaraki, Japan

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

199

Lastpage

202

Abstract

This paper reports the first power application of AlGaAs/GaAs HBTs with selective regrown extrinsic base layers. The ultra-high carbon doping of the regrown extrinsic base led to an extremely low base resistance, which resulted in f/sub max/ of 143 GHz. Reliability test under both thermal and current stresses demonstrated the stability of the regrown HBT structure. A three-dimensional thermal simulator was also developed to determine the suitable pattern layout for the multi-finger structure. A common base HBT with six emitter fingers (240 /spl mu/m/sup 2/) delivered RF power performances of 365 mW CW output power with 23% power added efficiency and 9.1 dB power gain at 25.2 GHz.<>

Keywords

III-V semiconductors; aluminium compounds; carbon; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; millimetre wave bipolar transistors; millimetre wave power transistors; power bipolar transistors; semiconductor device reliability; simulation; stability; thermal analysis; thermal stresses; 143 GHz; 23 percent; 25.2 GHz; 365 mW; 3D thermal simulator; 9.1 dB; AlGaAs-GaAs:C; Ka-band performance; MM-wave device; RF power performances; common base HBT; current stresses; low base resistance; microwave power HBTs; millimeter-wave power HBTs; multi-finger structure; pattern layout; regrown HBT structure; regrown extrinsic base layers; reliability test; stability; thermal stresses; ultra-high C doping; Doping; Fingers; Gain; Gallium arsenide; Heterojunction bipolar transistors; Power generation; Radio frequency; Testing; Thermal stability; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383431

Filename

383431