GaInAsP lattice matched to GaAs for solar cell applications

Author

Sharps, P.R. ; Colpitts, T.S. ; Hancock, J. ; Hills, J.S. ; Timmons, M.L. ; Venkatasubramanian, R.

Author_Institution

Res. Triangle Inst., Research Triangle Park, NC, USA

fYear

1991

fDate

7-11 Oct 1991

Firstpage

315

Abstract

Initial results in the development of GaInAsP (1.55 eV) solar cells lattice matched to GaAs are presented. The films are grown by organometallic vapor phase epitaxy (OMVPE) on GaAs and on Ge substrates. As-grown films are n-type, with minority carrier lifetimes of up to 35 ns. p-on-p solar cells have been prepared, with AlGaAs window layers. Under AM1.5 direct light (100 mW/cm²), a cell has been measured with a V_oc of 1.08 V, a J_sc of 20.6 mA/cm², a fill factor of 81.7%, and an active area efficiency of 18.2%

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; minority carriers; solar cells; vapour deposited coatings; 18.2 percent; GaInAsP solar cells; active area efficiency; fill factor; lattice matching; minority carrier lifetimes; organometallic vapor phase epitaxy; Charge carrier lifetime; Degradation; Doping; Epitaxial growth; Fluid flow; Gallium arsenide; Lattices; Photonic band gap; Photovoltaic cells; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169230

Filename

169230