Title :
An improved InP solar cell designed with an increased open circuit voltage
Author :
Kilmer, Louis C. ; Barnett, Allen M.
Author_Institution :
Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
Abstract :
A high-open-circuit voltage P/N InP solar cell has been designed to yield a Voc=0.970 V. By using a two-step solar cell growth sequence and an internal oxide layer with selective LPE growth, the contact area may be limited such that a low J0 value may be obtained. This low J0 significantly increases the device open circuit voltage
Keywords :
III-V semiconductors; indium compounds; solar cells; 0.97 V; 2-step growth sequence; InP solar cell; contact area; high-open-circuit voltage; internal oxide layer; selective LPE growth; semiconductor; Current density; Design optimization; Fabrication; Indium phosphide; Photonic band gap; Photovoltaic cells; Predictive models; Semiconductor materials; Short circuit currents; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169236
