Title :
Back surface fields for GaInP2 solar cells
Author :
Friedman, D.J. ; Kurtz, S.R. ; Kibbler, A.E. ; Olson, J.M.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
Back surface passivation of the GaInP top cell in GaInP2/GaAs two-terminal tandem cells is discussed. Because of the requirement of current matching of the top and bottom cell, the top cell must be made very thin (on the order of 1 μm), and thus proper passivation of the top cell back surface is important in achieving high open-circuit voltages. A comparison is made of two candidate top-cell back surface fields: (1) an AlGaInP quarternary, and (2) GaInP2 grown to give a bandgap higher than that of the base of the cell
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; passivation; solar cells; 2-terminal solar cell; GaInP2-GaAs tandem solar cells; back surface passivation; current matching; semiconductor; top-cell back surface fields; Dark current; Displays; Lighting; Photonic band gap; Photovoltaic cells; Scattering; Virtual manufacturing; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169238
