Title :
First results of AlGaAs/Si monolithic 2-terminal tandem solar cell grown by MOCVD
Author :
Umeno, Masayoshi ; Shimizu, Hiroaki ; Egawa, Takashi ; Soga, Tetsuo ; Jimbo, Takashi
Author_Institution :
Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan
Abstract :
The first results of Al0.1Ga0.9As/Si monolithic two-terminal tandem solar cell grown by MOCVD are presented. The Al0.1Ga0.9As/Si two-terminal tandem solar cell has exhibited a conversion efficiency of 12.8% (AM0, 1 SUN), and the corresponding short-circuit current density, open-circuit voltage, and fill factor are 13.50 mA/cm2, 1.370 V, and 79.3%, respectively. A theoretical efficiency as high as 34% can be obtained by the Al0.25Ga0.75As/Si structure
Keywords :
III-V semiconductors; aluminium; elemental semiconductors; gallium arsenide; short-circuit currents; silicon; solar cells; vapour deposited coatings; 12.8 percent; Al0.1Ga0.9As-Si tandem solar cells; MOCVD; conversion efficiency; fill factor; metal-organic chemical vapour deposition; monolithic 2-terminal solar cells; open-circuit voltage; semiconductor; short-circuit current density; Annealing; Atomic measurements; Crystallization; Etching; Gallium arsenide; MOCVD; P-n junctions; Photovoltaic cells; Substrates; Surface morphology;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169239
