Title :
Two-terminal monolithic InP/InGaAsP tandem solar cells with tunneling intercell ohmic connections
Author :
Shen, C.C. ; Chang, P.T. ; Emery, K.A.
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
Abstract :
A monolithic two-terminal InP/InGaAsP tandem solar cell has been successfully fabricated by two-step liquid phase epitaxial (LPE) growth. This tandem solar cell consists of a 1.35-eV p/n InP homojunction top subcell and a 0.95 eV p/n InGaAsP homojunction bottom subcell. A patterned 0.95 eV n+/p+ InGaAsP tunnel diode was employed as an intercell ohmic connection. The open-circuit voltage, short-circuit current and fill factor exhibited by the best device under one sun, AM1.5 global illumination were 1.363 V, 13.85 mA/cm2, and 0.786, respectively; with a total-area power conversion efficiency of 14.8%. The InP/InGaAsP tandem structure demonstrated could be useful for the future development of a monolithic, two-terminal, InP-based three-junction tandem solar cell with projected conversion efficiency exceeding 30%
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; solar cells; 1.363 V; 14.8 percent; 2-step liquid phase epitaxial growth; 2-terminal monolithic solar cells; InP-InGaAsP tandem solar cells; LPE; fill factor; homojunction bottom subcell; homojunction top subcell; intercell ohmic connection; open-circuit voltage; short-circuit current; tunnel diode; tunneling intercell ohmic connections; Coatings; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lighting; Microwave integrated circuits; Photovoltaic cells; Semiconductor diodes; Substrates; Tunneling;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169243
